FDH45N50F View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
FDH45N50F Datasheet PDF : 3 Pages
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FDH45N50F
Pb Free Plating Product
FDH45N50F
Pb
50A,500V N-Channel Type Planar Process Power MOSFET
Features
■ High ruggedness
■ RDS(on)(Max.0.12 Ω )@VGS=10V,ID =20.0A
■ Gate Charge (Typical 101nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1. Gate{
{ 2. Drain
{
◀▲
●
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-247 pkg is well suited for
adaptor power unit and power inverter/amplifier application.
BVDSS = 500V
RDS(ON) = 0.09ohm(Typical)
ID = 40A (50A Normal)
TO-247
S
D
G
a) Limited Parameters:
Symbol
VDSS
ID
IDM
VGS
Ptot
Tj
Eas
Parameter
Drain-to-Source Breakdown Voltage
Drain Current (continuous) at Tc=25℃
Drain Current (pulsed)
Gate to Source Voltage
Total Dissipation at Tc=25℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
Symbol
RθJC
Paramter
Junction-to-Case
Value
500
40
150
+/-30
375
175
3200
Typ
0.35
Units
V
A
A
V
W
℃
mj
Units
℃/W
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com.tw/
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