HAT2167H(2003) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

HAT2167H
(Rev.:2003)

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

Reverse Drain Current vs.

Source to Drain Voltage

50

10 V

40

5V

VGS = 0

30

20

10

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Maximum Avalanche Energy vs.

Channel Temperature Derating

50

IAP = 20 A

40

VDD = 15 V

duty < 0.1 %

Rg ≥ 50 Ω

30

20

10

0

25 50 75 100 125 150

Channel Temperature Tch (˚C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

L • IAP2 •

VDSS

VDSS - V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

Rev.4.00, Jun.04.2003, page 7 of 10

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