FCP7N60 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FCP7N60 Datasheet PDF : 11 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25°C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
VGS = 10V
VGS = 20V
Note : TJ = 25°C
5
10
15
20
ID, Drain Current [A]
101
100
10-1
2
150°C
25°C
-55°C
Note
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150°C
25°C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 7A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
3
FCP7N60 / FCPF7N60 Rev. C1
www.fairchildsemi.com
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