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Part Name
Description
2SK3878(F) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3878(F)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
2SK3878(F) Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3878
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10
μ
100
μ
1m
10 m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
0.833°C/W
100 m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSE)
*
10
ID max (CONTINUOUS)
1 ms
*
100
μ
s
*
DC OPERATION
1
Tc
=
25°C
0.1
*
SINGLE NONPETITIVE PULSE
Tc
=
25°C
Curves must be derated linearly with
increase in temperature.
0.01
1
10
100
VDSS max
1000
10000
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
1000
800
600
400
200
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
17.6 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2010-05-06
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