DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SK3878 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SK3878 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3878
rth tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10 μ
100 μ
1m
10 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
100 m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSE) *
10 ID max (CONTINUOUS)
1 ms *
100 μs *
DC OPERATION
1
Tc = 25°C
0.1
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.01
1
10
100
VDSS max
1000
10000
DRAINSOURCE VOLTAGE VDS (V)
EAS – Tch
1000
800
600
400
200
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 17.6 mH
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5
2010-05-06

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]