MWI200-06 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
MWI200-06 Datasheet PDF : 4 Pages
| |||
MWI 200-06 A8
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
260
A
165
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
IRM
t
rr
RthJC
Module
Symbol
TVJ
TJM
Tstg
VISOL
Md
Symbol
Rpin-chip
dS
dA
RthCH
Weight
Conditions
Characteristic Values
min. typ. max.
I
F
=
200
A;
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
IF = 120 A; diF/dt = -1000 A/µs; TVJ = 125°C
V = 300 V; V = 0 V
R
GE
(per diode)
1.9 2.1 V
1.5
V
56
A
100
ns
0.3 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.1 V; R0 = 6 mΩ
Free wheeling Diode (typ. at TJ = 125°C)
V0 = 1.1 V; R0 = 2 mΩ
Thermal Response
Conditions
operating
IISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+125
°C
+150
°C
-40...+125
°C
2500
V~
3-6
Nm
Characteristic Values
min. typ. max.
1.8
mΩ
10
mm
10
mm
0.01
K/W
300
g
IGBT (typ.)
Cth1 = 0.397 J/K; Rth1 = 0.131 K/W
Cth2 = 2.243 J/K; Rth2 = 0.049 K/W
Free wheeling Diode (typ.)
Cth1 = 0.281 J/K; Rth1 = 0.236 K/W
Cth2 = 1.945 J/K; Rth2 = 0.064 K/W
Dimensions in mm (1 mm = 0.0394")
© 2004 IXYS All rights reserved
2-4
Share Link: 