MWI200-06A8 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
MWI200-06A8 Datasheet PDF : 4 Pages
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MWI 200-06 A8
16
mJ
12
Eon
VCE = 300 V
VGE = ±15 V
RG = 1.5 Ω
TVJ = 125°C
8
4
0
0
Fig. 7
100
200
300
IC
Typ. turn on energy
versus collector current
A 400
20
mJ
Eon 16
12
VCE = 300 V
VGE = ±15 V
IC = 200 Α
TVJ = 125°C
8
4
0
0
4
8
12
16 Ω 20
RG
Fig. 9 Typ. turn on energy
versus gate resistor
500
A
400
ICM
300
200
100
RG = 1.5 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area RBSOA
16
mJ
Eoff 12
VCE = 300 V
VGE = ±15 V
RG = 1.5 Ω
TVJ = 125°C
8
4
0
0
100
200
300 A 400
IC
Fig. 8 Typ. turn off energy
versus collector current
8
mJ
Eoff
6
4
VCE = 300 V
VGE = ±15 V
IC = 200 Α
TVJ = 125°C
2
0
4
8
12
RG
Fig.10 Typ. turn off energy
versus gate resistor
16 Ω 20
1
K/W
0.1
ZthJC
0.01
0.001
single pulse
diode
IGBT
0.0001
0.0001 0.001 0.01
0.1
MWI200-06A8
1
t
s 10
Fig. 12 Typ. transient thermal impedance
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