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Part Name
Description
SM2LZ47 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
SM2LZ47
BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Toshiba
SM2LZ47 Datasheet PDF : 5 Pages
1
2
3
4
5
SM2LZ47
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off
−
State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On
−
State Voltage
Gate Non
−
Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off
−
State Voltage
Critical Rate of Rise of Off
−
State Voltage
at Communication
SYMBOL
TEST CONDITION
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
R
th (j
−
a)
dv / dt
(dv / dt) c
V
DRM
= 800V
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
I
TM
= 3A
V
D
= 800V, Tc = 125°C
V
D
= 12V, I
TM
= 1A
Junction to Ambient, AC
V
DRM
= 800V, T
j
= 125°C
Exponential Rise
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
−
0.5A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
10
―
―
10
mA
―
―
10
―
―
2.0
V
0.2
―
―
V
―
―
10
mA
―
―
58 °C / W
―
500
―
V / µs
5
―
―
V / µs
MARKING
NUMBER
SYMBOL
*1
Toshiba Product Mark
*2
TYPE
SM2LZ47
MARK
M2LZ47
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
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