STW20NM50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STW20NM50 Datasheet PDF : 8 Pages
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STW20NM50
N-CHANNEL 500V - 0.20Ω - 20A TO-247
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NM50
500V
< 0.25Ω
20 A
n TYPICAL RDS(on) = 0.20Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
500
500
±30
20
12.6
80
214
1.44
15
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/8
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