NTMD3N08LR2(2002) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NTMD3N08LR2
(Rev.:2002)

Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package

ON Semiconductor 

NTMD3N08LR2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Positive Temperature Coefficient

V(BR)DSS

80

–

Zero Gate Voltage Drain Current

(VDS = 80 Vdc, VGS = 0 Vdc)

(VDS = 80 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current

(VGS = 15 Vdc, VDS = 0 Vdc)

(VGS = –15 Vdc, VDS = 0 Vdc)

IDSS

–

–

IGSS

–

–

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Negative Temperature Coefficient

VGS(th)

1.0

–

Static Drain–to–Source On–State Resistance

(VGS = 5.0 Vdc, ID = 1.0 Adc)

(VGS = 10 Vdc, ID = 2.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc, TJ @ 150°C)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

RDS(on)

–

–

–

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Notes 3 and 4)

Turn–On Delay Time (VDD = 40 Vdc, ID = 1.0 A, VGS = 4.5 V, RG = 27 W)

Turn–On Delay Time (VDD = 40 Vdc, ID = 2.5 A, VGS = 10 V, RG = 47 W)

Rise Time (VDD = 40 Vdc, ID = 1.0 A, VGS = 4.5 V, RG = 27 W)

Rise Time (VDD = 40 Vdc, ID = 2.5 A, VGS = 10 V, RG = 47 W)

Turn–Off Delay Time (VDD = 40 Vdc, ID = 1.0 A, VGS = 4.5 V, RG = 27 W)

Turn–Off Delay Time (VDD = 40 Vdc, ID = 2.5 A, VGS = 10 V, RG = 47 W)

Fall Time (VDD = 40 Vdc, ID = 1.0 A, VGS = 4.5 V, RG = 27 W)

Fall Time (VDD = 40 Vdc, ID = 2.5 A, VGS = 10 V, RG = 47 W)

td(on)

–

–

tr

–

–

td(off)

–

–

tf

–

–

Total Gate Charge (VDS = 40 Vdc, VGS = 5.0 Vdc, ID = 1.0 A)

Total Gate Charge (VDS = 40 Vdc, VGS = 10 Vdc, ID = 1.0 A)

Gate–Source Charge

(VDS = 40 Vdc, VGS = 5.0 Vdc, ID = 1.0 A)

Gate–Drain Charge

(VDS = 40 Vdc, VGS = 5.0 Vdc, ID = 1.0 A)

Qtot

–

–

Q1

–

Q2

–

BODY–DRAIN DIODE RATINGS (Note 3)

Diode Forward On–Voltage

(IS = 1.0 Adc, VGS = 0 V)

(IS = 1.0 Adc, VGS = 0 V, TJ = 150°C)

VSD

–

–

Reverse Recovery Time

(IS = 1.0 A, dIS/dt = 100 A/ms, VGS = 0 V)

trr

–

ta

–

tb

–

Reverse Recovery Stored Charge

(IS = 1.0 A, dIS/dt = 100 A/ms, VGS = 0 V)

QRR

–

3. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.

4. Switching characteristics are independent of operating junction temperatures.

Typ

Max

Unit

–

–

Vdc

99.8

–

mV/°C

µAdc

–

10

–

250

nAdc

–

100

–

–100

1.9

4.6

0.215

0.190

0.446

3.0

–

0.245

0.215

0.505

Vdc

mV/°C

Ω

218

480

pF

54

150

15

50

21

34

ns

13

–

62

104

95

–

52

85

47

–

48

81

104

–

4.0

9.0

nC

7.5

15

1.16

–

2.11

–

Vdc

0.8

1.0

1.4

–

47

93

ns

25

–

22

–

0.067 0.134

mC

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