NTMD3N08LR2 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NTMD3N08LR2
ON Semiconductor
NTMD3N08LR2 Datasheet PDF : 8 Pages
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NTMD3N08LR2
Power MOSFET
2.3 Amps, 80 Volts
N−Channel Enhancement−Mode
SO−8 Dual Package
Features
• Ultra Low On−Resistance Provides Higher Efficiency
♦ RDS(on) = 0.215 W, VGS = 10 V
♦ RDS(on) = 0.245 W, VGS = 5.0 V
• Low Reverse Recovery Losses
• Internal RG = 50 W
• Designed for Power Management Solutions in 42 V Automotive
System Applications
• IDSS and RDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
Applications
• Integrated Starter Alternator
• Electronic Power Steering
• Electronic Fuel Injection
• Catalytic Converter Heaters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 mW)
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage −
Non−Repetitive (tp ≤ 10 ms)
Continuous Drain Current @ TA = 25°C
Pulsed Drain Current (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
80
V
VDGR
80
VGS
±15
V
VGSM
±20
ID
2.3
A
IDM
25
PD
3.1
W
TJ, Tstg −55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, Peak
IL = 7.0 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance −
Junction−to−Ambient (Note 2)
EAS
25
mJ
RqJA
48 °C/W
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%
2. Mounted onto a 2″ square FR−4 board
(1in sq, oz. Cu 0.06″ thick single sided), t ≤ 5 seconds
http://onsemi.com
2.3 AMPERES
80 VOLTS
215 mW @ VGS = 5 V (Typ)
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
3N08
AYWW G
G
1
S1 G1 S2 G2
3N08
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD3N08LR2
SO−8 2500/Tape & Reel
NTMD3N08LR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 7
Publication Order Number:
NTMD3N08LR2/D
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