IRIS-G5624A View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRIS-G5624A

INTEGRATED SWITCHER

International Rectifier 

IRIS-G5624A

Absolute Maximum Ratings (Ta=25ºC)

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are

absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions.

Symbol

Definition

IDpeak Drain Current

*1

IDMAX Maximum switching current *5

Terminals Max. Ratings Units

1-2

14.4

A

1-2

14.4

A

Note

Single Pulse

V2-3=0.78V

Ta=-20~+125℃

Single Pulse

VDD=99V, L=20mH

EAS Single pulse avalanche energy *2

1-2

248

mJ

IL peak=4.4A

Vin Input voltage for control part

4-3

35

V

Vth O.C.P/F.B Pin voltage

5-3

6

V

26

W With infintite heatsink

PD1 Power dissipation for MOSFET *3

1-2

1.5

W Without heatsink

Power dissipation for control part

Specified by

PD2

(Control IC) *4

4-3

0.8

W

Vin×Iin

Internal frame temperature

Refer to recommended

TF in operation

-

-20 ~ +125 ℃ operating temperature

Top Operating ambient temperature

-

-20 ~ +125 ℃

Tstg Storage temperature

-

-40 ~ +125 ℃

Tch Channel temperature

-

150

℃

*1 Refer to MOS FET A.S.O curve

*2 MOS FET Tch-EAS curve

*3 Refer to MOS FET Ta-PD1 curve

Fig.1

V2-3

*4 Refer to TF-PD2 curve for Control IC (See page 5)

*5 Maximum switching current.

The maximum switching current is the Drain current determined by the drive voltage of the IC and

threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and

Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1

Accordingly please use this device within the decrease value, referring to the derating

curve of the maximum switching current.

www.irf.com

Share Link: