STPS2545CG-TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2545CG-TR Datasheet PDF : 10 Pages
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STPS2545C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
VR = VRRM
IF = 12.5 A
IF = 25 A
Tj = 125 °C IF = 25 A
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.012 x IF2(RMS)
125
µA
9
25
mA
0.50 0.57
0.84
V
0.65 0.72
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current)
ambient temperature (δ = 0.5)
PF(AV)(W)
10
9
8
7
6
5
4
3
2
1
0
0.0
2.5
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
5.0
7.5
10.0
12.5
15.0
IF(AV)(A)
14
12
Rth(j-a)=Rth(j-c)
10
8
6
Rth(j-a)=50°C/W
4
T
2
0 δ=tp/T
tp
0
25
50
Tamb(°C)
75
100
TO-220AB/D²PAK
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
0.01
0.1
tp(µs)
1
10
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Doc ID 8736 Rev 4
3/10
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