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25VF080 View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
25VF080
SST
Silicon Storage Technology SST
25VF080 Datasheet PDF : 23 Pages
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Advance Information
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
8 Mbit SPI Serial Flash
SST25VF080
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A23-A0]. Following the
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait TBP for the completion of the internal
self-timed Byte-Program operation. See Figure 5 for the
Byte-Program sequence.
CE#
MODE 3
SCK MODE 0
0 1 2345 6 78
15 16
23 24 31 32 39
SI
02
MSB
SO
FIGURE 5: BYTE-PROGRAM SEQUENCE
ADD.
MSB
ADD.
HIGH IMPEDANCE
ADD. DIN
MSB LSB
1250 F05.0
©2003 Silicon Storage Technology, Inc.
10
S71250-00-000
10/03

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