STPS20H100CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20H100CT Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
STPS20H100C
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward
current δ = 0.5
TO-220AB
D2PAK / I2PAK
TO-220FPAB
IFSM
IRRM
IRSM
PARM
Tstg
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Tc = 160 °C Per diode
Tc = 145 °C Per device
tp = 10 ms sinusoidal
tp = 2 µs square F= 1 kHz
tp = 100 µs square
tp = 1 µs Tj = 25 °C
100
30
10
20
250
1
3
10800
-65 to + 175
Tj
Maximum operating junction temperature (1)
175
dV/dt Critical rate of rise of reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
10000
Symbol
Parameter
Value
TO-220AB / D2PAK / I 2PAK Per diode
1.6
TO-220FPAB
Per diode
4
Rth(j-c) Junction to case
TO-220AB / D2PAK / I2PAK
Total
0.9
Rth(c)
TO-220FPAB
Total
3.2
TO-220AB / D2PAK / I2PAK Coupling
0.15
TO-220FPAB
Coupling
2.5
V
A
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
2/11
Doc ID 5386 Rev 7
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