PSMN030-150P View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PSMN030-150P

N-channel TrenchMOS™ transistor

Philips Electronics 

Philips Semiconductors

Product specification

N-channel TrenchMOS transistor

PSMN030-150P

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

(body diode)

ISM

Pulsed source current (body

diode)

VSD

Diode forward voltage

IF = 25 A; VGS = 0 V

trr

Reverse recovery time

IF = 20 A; -dIF/dt = 100 A/µs;

Qrr

Reverse recovery charge VGS = 0 V; VR = 30 V

MIN. TYP. MAX. UNIT

-

- 55.5 A

-

- 222 A

- 0.85 1.2 V

- 109 - ns

- 610 - nC

June 2000

3

Rev 1.000

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