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2SK3712-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
2SK3712-Z
NEC
NEC => Renesas Technology NEC
2SK3712-Z Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2
1.75
VGS = 10 V
Pulsed
ID = 9.0 A
1.5
1.25
1
4.5 A
0.75
0.5
0.25
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
tf
td(off)
10
td(on)
tr
VDD = 125 V
VGS = 10 V
RG = 0
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0 V
Pulsed
10
1
0.1
0.01
0
0.25
0.5
0.75
1
1.25 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3712
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
C iss
100
C oss
10
C rss
VGS = 0 V
f = 1 MHz
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
250
15
ID = 9.0 A
200
VDD = 200 V
125 V
62.5 V
150
100
12
9
VGS
6
50
VDS
3
0
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16372EJ2V0DS
5

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