2SK4059TK View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SK4059TK

Silicon N Channel Junction Type Field Effect Transistor

Toshiba 

2SK4059TK

For ECM

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK4059TK

• Application for compact ECM

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Symbol

Rating

Unit

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta = 25°C)

Junction Temperature

Storage temperature range

VGDO

IG

PD

Tj

Tstg

-20

V

10

mA

100

mW

125

°C

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Unit: mm

1.2±0.05

0.8±0.05

1

3

2

TESM3

1.Drain

2.Source

3.Gate

JEDEC

-

JEITA

-

TOSHIBA

2-1R1A

Weight: 2.2mg (typ.)

IDSS CLASSIFICATION

A-Rank 140~240µA

B-Rank 210~350µA

BK-Rank 210~400µA

C-Rank 320~500µA

Marking

8

Type Name

IDSS Classification Symbol

A :A-Rank

B :B-Rank BK-Rank

C :C-Rank

Equivalent Circuit

D

G

S

1

2007-11-01

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