MC33390D/DR2 View Datasheet(PDF) - Freescale Semiconductor
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MC33390D/DR2 Datasheet PDF : 15 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 Ω to GND, 3.6 nF to GND
BUS Load = 257 Ω to GND, 20.2 nF to GND
IBAT (OP1)
–
IBAT (OP2)
–
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
IBAT(BUS L1)
–
IBAT(BUS L2)
–
Sleep State Battery Current
VSLEEP = 0 V
IBAT(SLEEP)
–
mA
3.0
11.5
22.4
32
mA
1.1
3.0
6.4
8.5
µA
38.2
65
BUS
BUS Input Receiver Threshold (6)
Threshold High (Bus Increasing until Rx ≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx ≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
BUS-Out Voltage (257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω)
8.2 V ≤ VBAT ≤ 16 V, Tx = 5.0 V
4.25 V ≤ VBAT ≤ 8.2 V, Tx = 5.0 V
Tx = 0 V
V
VBUS(IH)
4.25
3.9
–
VBUS(IL)
–
3.7
3.5
BUSTH(SLEEP)
2.4
3.0
3.4
VBUS(HYST)
0.1
0.2
0.6
V
VBUS (OUT1)
VBUS (OUT2)
VBUS (OUT3)
6.25
VBAT - 1.6
–
6.9
–
0.27
8.0
VBAT
0.7
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V
IBUS (SHORT)
60
mA
129
170
BUS Leakage Current
-2.0 V ≤ VBUS ≤ 0 V
0 V ≤ VBUS ≤ VBAT
BUS Thermal Shutdown (7) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS ≤ 2.5 V
BUS Thermal Shutdown Hysteresis (8)
TBUS (LIM) - TBUS (REEN)
µA
IBUS (LEAK1)
-500
-55
–
IBUS (LEAK2)
–
189
500
TBUS (LIM)
°C
150
170
190
TBUS (LI MHYS)
°C
10
12
15
BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 µA) (see
Figure 4)
-18 V ≤ VBUS ≤ 9.0 V
IBUS (LOSS)
–
ILOAD (LOSS)
–
-18 V ≤ VLOAD ≤ 9.0 V
mA
0.00
0.1
0.00
0.1
Notes
6. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
7. Device characterized but not production tested for thermal shutdown.
8. Device characterized but not production tested for thermal shutdown hysteresis.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33390
5
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