4N60 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
4N60 Datasheet PDF : 8 Pages
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UNISONIC TECHNOLOGIES CO., LTD
4N60
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1
TO-220
1
TO-220F1
1
TO-252
1
TO-263
Power MOSFET
1
TO-220F
1
TO-220F2
1
TO-251
1
TO-262
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
4N60L-TF1-T
4N60G-TF1-T
4N60L-TF2-T
4N60G-TF2-T
4N60L-TF3-T
4N60G-TF3-T
4N60L-TM3-T
4N60G-TM3-T
4N60L-TN3-R
4N60G-TN3-R
4N60L-TN3-T
4N60G-TN3-T
4N60L-T2Q-T
4N60G-T2Q-T
4N60L-TQ3-R
4N60G-TQ3-R
4N60L-TQ3-T
4N60G-TQ3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-252
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2011 Unisonic Technologies Co., Ltd
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