AMS4N60 View Datasheet(PDF) - Advanced Monolithic Systems Inc

Part Name

Description

Manufacturer

AMS4N60

4A, 600V N-CHANNEL POWER MOSFET

Advanced Monolithic Systems Inc 

AMS4N60

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Drain Current

Continuous

Pulsed (Note 2)

Single Pulsed 4N60

Avalanche Energy

(Note 3)

4N60-E

VDSS

VGSS

IAR

ID

IDM

EAS

600

V

±30

V

4.4

A

4.0

A

16

A

260

mJ

200

mJ

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

EAR

dv/dt

10.6

mJ

4.5

V/ns

TO-220/TO-262/TO-263

106

W

Power Dissipation

TO-220F/TO-220F1

PD

TO-251/ TO-252

36

W

50

W

Junction Temperature

TJ

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

PACKAGE

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251/ TO-252

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251/ TO-252

SYMBOL

θJA

θJc

RATINGS

62.5

62.5

83

1.18

3.47

2.5

UNIT

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

2

Advanced Monolithic Systems http://www.ams-semitech.com

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