4C4M4EOQ-50TC View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

4C4M4EOQ-50TC

4M X 4 CMOS Quad CAS DRAM (EDO) family

Alliance Semiconductor 

®

CAS-before-RAS self refresh cycle

RAS

UCAS,

LCAS

DQ

tRP

tRPC

tCP

tCSR

tCEZ

tRASS

AS4C4M4EOQ

AS4C4M4E1Q

tCHS

tRPS

tRPC

Capacitance 15

Parameter

Input capacitance

DQ capacitance

Symbol

CIN1

CIN2

CDQ

Signals

A0 to A9

RAS, UCAS, LCAS, WE, OE

DQ0 to DQ15

4C4M4EOQ ordering information

Package \ RAS access time

Plastic SOJ, 300 mil, 24/26-pin

5V

Plastic TSOP, 300 mil, 24/26-pin

5V

50 ns

4C4M4EOQ-50JC

4C4M4EOQ-50TC

ƒ = 1 MHz, Ta = Room temperature

Test conditions Max

Unit

Vin = 0V

5

pF

Vin = 0V

7

pF

Vin = Vout = 0V

7

pF

60 ns

4C4M4EOQ-60JC

4C4M4EOQ-60TC

AS4C4M4E1Q ordering information

Package \ RAS access time

Plastic SOJ, 300 mil, 24/26-pin

5V

Plastic TSOP, 300 mil, 24/26-pin

5V

50 ns

AS4C4M4E1Q-50JC

AS4C4M4E1Q-50TC

60 ns

AS4C4M4E1Q-60JC

AS4C4M4E1Q-60TC

4C4M4EOQ family part numbering system

AS4

C

4M4

E0

–XX

DRAM

prefix

C = 5V CMOS 4M×4

LC = 3.3V CMOS

E0=4K refresh RAS access

E1=2K refresh time

X

C

Package:

J = SOJ 300 mil, 24/26

Commercial temperature

T = TSOP 300 mil, 24/26 range, 0°C to 70 °C

3/22/01; v.1.0

Alliance Semiconductor

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