AS58C1001DG(2008) View Datasheet(PDF) - Austin Semiconductor

Part Name

Description

Manufacturer

AS58C1001DG
(Rev.:2008)

128K x 8 EEPROM EEPROM Memory

Austin Semiconductor 

Austin Semiconductor, Inc.

(EXAMPLE)

Vcc

EEPROM

AS58C1001

RES\

*unprogrammable

*unprogrammable

FUNCTIONAL DESCRIPTION (continued)

DATA PROTECTION (continued)

2. Data protection at Vcc on/off.

When RES\ is low, the EEPROM cannot be erased and

programmed. Therefore, data can be protected by keeping

RES\ low when Vcc is switched. RES\ should be high during

programming because it does not provide a latch function.

When Vcc is turned on or off, noise on the control pins

generated by external circuits (CPU, etc.) may turn the

EEPROM to programming mode by mistake. To prevent

this unintentional programming, the EEPROM must be kept

in an unprogrammable, standby or readout state by using a

CPU reset signal to RES\ pin.

In addition, when RES\ is kept high at Vcc on/off timing,

the input level of control pins (CE\, OE\, WE\) must be held

as CE\=Vcc or OE\=LOW or WE\=Vcc level.

3. Software Data Protection

To protect against unintentional programming caused by

noise generated by external circuits, AS58C1001 has a

Software data protection function. To initate Software data

protection mode, 3 bytes of data must be input, followed by

a dummy write cycle of any address and any data byte. This

exact sequence switches the device into protection mode.

Write Data

Write Address (Normal Data Input)

5555

AA

2AAA

55

5555

A0

The Software data protection mode can be cancelled by

inputting the following 6 Bytes. This changes the AS58C1001

to the Non-Protection mode, for normal operation.

Address

5555

2AAA

5555

5555

Data

AA

55

80

AA

2AAA

55

5555

20

AS58C1001

Rev. 5.5 12/08

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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