BCR10PM-12LG View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
BCR10PM-12LG Datasheet PDF : 8 Pages
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BCR10PM-12LG
Performance Curves
Maximum On-State Characteristics
102
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics (I, II and III)
5
3
2 VGM = 10V
101
7
5
3
2
VGT = 1.5V
PGM = 5W
PG(AV) =
0.5W
IGM = 2A
100
7
5
3
2
10–1 IRGT I IFGT I, IRGT III
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7
Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
REJ03G1509-0200 Rev.2.00 Jun 28, 2007
Page 3 of 7
Rated Surge On-State Current
100
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
Typical Example
5
3
IRGT I, IRGT III
2
102
IFGT I
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
100
101
102
Conduction Time (Cycles at 60Hz)
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