BCW81 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BCW81 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN general purpose transistor
Product specification
BCW81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base; IC = 2 mA
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
45
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 2 mA; VCE = 5 V
IE = Ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
420
−
−
−
−
550
−
100
−
TYP.
−
−
−
−
120
210
750
850
−
2.5
−
−
MAX.
100
10
100
800
250
−
−
−
700
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
1997 Apr 02
3
Share Link: 