BSC0908NS View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSC0908NS Datasheet PDF : 12 Pages
| |||
OptiMOS™ Power-MOSFET
BSC0908NS
Electrical characteristics
Table 6 Gate charge characteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Min.
-
-
-
-
-
-
-
Gate charge total, sync. FET
Qg(sync)
Output charge
Qoss
1) See figure 16 for gate charge parameter definition
Values
Typ.
3.7
1.8
1.8
3.6
6.8
3.4
14
Max.
-
-
-
-
-
-
-
5.9
11
Unit
nC
Note /
Test Condition
VDD=15 V,
ID=30 A,
VGS=0 to 4.5 V
V
nC
VDD=15 V,
ID=30 A,
VGS=0 to 10V
VDS=0.1 V,
VGS=0 to 4.5 V
VDD=15 V, VGS=0 V
Table 7 Reverse diode characteristics
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
Is
IS,pulse
VSD
Min.
-
Reverse recovery charge
Qrr
-
Values
Typ.
0.9
Max.
27
108
-
5
-
Unit Note /
Test Condition
A
TC=25 °C
V
VGS=0 V, IF=30 A,
Tj=25 °C
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Final Data Sheet
4
3.1, 2010-10-18
Share Link: 