DCR504ST View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR504ST

Phase Control Thyristor

Dynex Semiconductor 

DCR504ST

DYNAMIC CHARACTERISTICS

Symbol

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

r

T

tgd

IL

IH

t

q

Parameter

Conditions

Typ.

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Gate open circuit.

-

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Delay time

Latching current

Holding current

Turn-off time

From 67% VDRM to 700A Repetitive 50Hz -

Gate source 10V, 5Ω

tr ≤ 0.5µs, Tj = 125oC

Non-repetitive -

At Tvj = 125oC

-

At T = 125oC

-

vj

VD = 67% VDRM, Gate source 20V, 10Ω

dIG/dt = 20A/µs, Tj = 25oC

-

Tj = 25oC, VD = 10V

-

Tj = 25oC, Rg-k = ∞

-

IT = 300A, tp = 1ms, Tj = 125˚C,

VR = 50V, dIRR/dt = 20A/µs,

300

VDR = 67% VDRM, dVDR/dt = 20V/µs linear.

Max. Units

30 mA

1000 V/µs

350 A/µs

700 A/µs

1.05 V

0.8 mΩ

0.8

µs

200 mA

30 mA

-

µs

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

I

GT

VGD

VFGM

VFGN

VRGM

I

FGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At 67% VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

3.0

V

150 mA

0.25 V

30

V

0.25 V

5

V

10

A

100 W

5

W

4/8

www.dynexsemi.com

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