DCR504ST View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR504ST

Phase Control Thyristor

Dynex Semiconductor 

DCR504ST

10000

IT

tp

dIT/dt

QR

0.25xIRM

IRM

1000

100

Conditions:

Tj = 125˚C

VR = 50V

tp = 1ms

IT = 300A

10

Upper limit 95%

100

0.1

1.0

10

100

Rate of decay of on-state current, dIT/dt - (A/µs)

Fig.4 Recovered charge

1.0

1

VGD

Lower limit 5%

Region of certain

triggering

0.1

0.001

0.01

0.1

1

Gate trigger current, IGT - (A)

10

IFGM

Fig.5 Gate characteristics

20

I2t = Î2 x t

2

15

Anode side cooled

0.1

Double side cooled

10

150

0.01

0.001

0.001

0.01

Conduction Effective thermal resistance

Junction to case ˚C/W

Double side

d.c.

0.063

Halfwave

0.073

3 phase 120˚ 0.093

6 phase 60˚ 0.112

Anode side

0.11

0.12

0.14

0.16

0.1

1

10

Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

I2t

5

100

0

50

1

10 1 2 3 45 10 20 30 50

ms

Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% VRRM at Tcase 125˚C)

6/8

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