DCR3790B35(2009) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR3790B35 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
DCR3790B42
10
Pulse Power PGM (Watts)
9
Pulse
Frequency Hz
Width us 50
100
400
8
100
150
150
150
200
150
150
125
7
500
150
150
100
1000
150
100
25
10000
20
-
-
6
Upper Limit
5
Preferred gate drive area
4
3
2
Tj = 25oC
Tj = -40oC
1
Tj = 125oC
Lower Limit
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
25
10W
20W
50W
100W
20
150W
-40C
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
8/10
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