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DCR3790B30 View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
Manufacturer
DCR3790B30
Dynex
Dynex Semiconductor Dynex
DCR3790B30 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS) RMS value
IT
Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR3790B42
Max. Units
3790
A
5953
A
5330
A
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
53.5
14.31
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance case to heatsink Clamping force 70.0kN
(with mounting compound)
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-55
63.0
0.007
0.0116
0.0181
0.0014
0.0028
125
125
77.0
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
2/10
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