DCR3790B35 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR3790B35

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DCR3790B42

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125°C

dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open

dI/dt Rate of rise of on-state current

From 67% VDRM to 2x IT(AV) Repetitive 50Hz

Gate source 30V, 10,

Non-repetitive

tr < 0.5µs, Tj = 125°C

VT(TO) Threshold voltage – Low level

700A to 4100A at Tcase = 125°C

Threshold voltage – High level

4100A to 12000A at Tcase = 125°C

rT

On-state slope resistance – Low level

700A to 4100A at Tcase = 125°C

On-state slope resistance – High level

4100A to 12000A at Tcase = 125°C

tgd

Delay time

VD = 67% VDRM, gate source 30V, 10

tr = 0.5µs, Tj = 25°C

tq

Turn-off time

Tj = 125°C, VR = 200V, dI/dt = 1A/µs,

dVDR/dt = 20V/µs linear

QS

Stored charge

IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,

IL

Latching current

Tj = 25°C, VD = 5V

-

-

-

-

-

-

-

-

TBD

250

1500

-

200

1500

200

400

0.83

1.0

0.1688

0.1263

TBD

500

4500

3

mA

V/µs

A/µs

A/µs

V

V

m

m

µs

µs

µC

A

IH

Holding current

Tj = 25°C, RG-K = , ITM = 500A, IT = 5A

-

300

mA

3/10

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