DCR3790B40 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR3790B40 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
Gate trigger voltage
VGD
Gate non-trigger voltage
IGT
Gate trigger current
IGD
Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
DCR3790B42
Max. Units
1.5
V
0.4
V
350 mA
10
mA
CURVES
7000
6000
5000
min 125°C
max 125°C
min 25°C
max 25°C
4000
3000
2000
1000
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where A = 0.348967
B = 0.066851
C = 0.000102
D = 0.003788
these values are valid for Tj = 125°C for IT 500A to 10000A
4/10
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