DCR3790B30 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR3790B30 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
DCR3790B42
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
d.c.
180
120
90
60
30
1000 2000 3000 4000 5000 6000 7000
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
20
Double Side Cooling
18
Anode Side Cooling
16
Cathode Sided Cooling
14
12
10
8
6
4
2
0
0.001 0.01
0.1
1
Time ( s )
10
100
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
d.c.
180
120
90
60
30
1000 2000 3000 4000 5000 6000 7000
Mean on-state current, IT(AV) - (A)
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
Anode side cooled
Cathode side cooled
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
Zth = [Ri x ( 1-exp. (t/ti))]
[1]
1
0.502
0.0137081
1.3035
0.0251065
1.2616
0.0245837
2
1.333
0.0548877
3.138
0.2410256
2.6216
0.2005035
3
2.9559
0.3311925
1.1859
1.0806
13.3603
5.7854
4
2.2335
1.6905
5.9136
11.002
0.8304
16.765
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
Double side cooling
Zth (z)
°
sine.
rect.
180
0.70
0.48
120
0.80
0.68
90
0.90
0.78
60
1.00
0.89
30
1.07
1.01
15
1.10
1.07
Anode Side Cooling
Zth (z)
°
sine.
rect.
180 0.67
0.47
120 0.77
0.66
90 0.87
0.75
60 0.95
0.86
30 1.02
0.96
15 1.05
1.02
Cathode Sided Cooling
Zth (z)
° sine.
180 0.67
rect.
0.47
120 0.77
0.66
90 0.87
0.76
60 0.95
0.86
30 1.02
0.96
15 1.05
1.02
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
6/10
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