DF051 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DF051 Datasheet PDF : 7 Pages
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DF051
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
14.0
kA
980 x 103 A2s
11.2
kA
627 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
Single side cooled
Clamping force 23.5kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
On-state (conducting)
Min. Max. Units
- 0.018 oC/W
- 0.034 oC/W
- 0.038 oC/W
- 0.003 oC/W
- 0.006 oC/W
-
150
oC
-55 150
oC
21.0 25.0 kN
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
IRRM
Peak reverse current
trr
Reverse recovery time
QRA1
Recovered charge (50% chord)
IRM
Reverse recovery current
K
Soft factor
VTO
r
T
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 1500A peak, T = 25oC
case
At V , T = 150oC
RRM case
IF = 1000A, diRR/dt = 100A/µs
Tcase = 150oC, VR = 100V
At T = 150oC
vj
At T = 150oC
vj
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
-
1.85 V
-
100 mA
5.0
-
µs
-
800 µC
-
250
A
1.6
-
-
-
1.1
V
-
0.5 mΩ
-
-
V
2/7
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