FB190SA10(2018) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
FB190SA10 Datasheet PDF : 9 Pages
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www.vishay.com
VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
SOT-227
PRIMARY CHARACTERISTICS
VDSS
ID DC
RDS(on)
Type
100 V
190 A
6.5 m
Modules - MOSFET
Package
SOT-227
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized device design, very
low on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
ID
IDM
PD
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
TJ, TStg
VISO
TC = 40 °C
TC = 100 °C
TC = 25 °C
M4 screw
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C
MAX.
190
130
720
568
2.7
± 20
700
180
48
5.7
-55 to +150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 02-Oct-2018
1
Document Number: 93459
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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