FB190SA10(2018) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
FB190SA10 Datasheet PDF : 9 Pages
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www.vishay.com
VS-FB190SA10
Vishay Semiconductors
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
- VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
D.U.T.
+
2
-
1
RG
+
Circuit layout considerations
• Low stray inductance
3
• Ground plane
• Low leakage inductance
current transformer
-
- 4+
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - Device under test
+
- VDD
Fig. 18 - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig. 19 - For N-Channel Power MOSFETs
Revision: 02-Oct-2018
6
Document Number: 93459
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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