VS-FB190SA10 View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

VS-FB190SA10

Power MOSFET, 190 A

Vishay Semiconductors 

VS-FB190SA10

Vishay Semiconductors

Power MOSFET, 190 A

1000

TJ = 150° C

100

10

TJ = 25° C

1

VGS = 0 V

0.1

0.2

0.6

1.0

1.4

1.8

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source Drain Diode Forward Voltage

10000

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

100

100us

1ms

10

10ms

TC = 25° C

TJ = 150° C

Single Pulse

1

1

10

100

VDS , Drain-to-Source Voltage (V)

1000

Fig. 8 - Maximum Safe Operating Area

175

150

125

DC

100

75

50

25

0

25 50 75 100 125 150 175 200

ID , Drain Current in DC (A)

Fig. 9 - Maximum Drain Current vs.

Case Temperature

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+

-

VDD

Fig. 10a - Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

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4

For technical questions, contact: indmodules@vishay.com

Document Number: 93459

Revision: 12-Apr-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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