Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
FM200TU-2A
6-Pack High Power MOSFET Module
100 Amperes/100 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Drain-Cutoff Current
Gate-Source Threshold Voltage
Gate Leakage Current
Static Drain-Source On-State Resistance
(Chip)
Static Drain-Source On-State Voltage
(Chip)
Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Source-Drain Voltage
IDSS
VGS(th)
IGSS
rDS(on)
VDS(on)
Rlead
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr
Qrr
VSD
VDS = VDSS, VGS = 0V
ID = 10mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 100A, VGS = 15V, Tj = 25°C
ID = 100A, VGS = 15V, Tj = 125°C
ID = 100A, VGS = 15V, Tj = 25°C
ID = 100A, VGS = 15V, Tj = 125°C
ID = 100A, Terminal-Chip, Tj = 25°C
ID = 100A, Terminal-Chip, Tj = 125°C
VDS = 10V, VGS = 0V
VDD = 48V, ID = 100A, VGS = 15V
VDD = 48V, ID = 100A,
VGS1 = VGS2 = 15V, RG = 13Ω,
Inductive Load Switching Operation,
IS = 100A
IS = 100A, VGS = 0V
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
Min.
Typ.
Max. Units
—
—
1.0
mA
4.7
6.0
7.3
Volts
—
—
1.5
µA
—
2.4
3.3
mΩ
—
4.1
—
mΩ
—
0.24 0.33 Volts
—
0.41
—
Volts
—
1.2
—
mΩ
—
1.68
—
mΩ
—
—
50
nF
—
—
7
nF
—
—
4
nF
—
760
—
nC
—
—
400
ns
—
—
300
ns
—
—
450
ns
—
—
300
ns
—
—
250
ns
—
3.6
—
µC
—
—
1.3
Volts
07/12 Rev. 1
3