FQD19N10 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD19N10 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQD19N10TM
Top Mark
FQD19N10
Package
D-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
ï€
Off Characteristics
Test Conditions
BVDSS
ï„BVDSS
/ ï„TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
ï€
On Characteristics
VGS = 0 V, ID = 250 ïA
ID = 250 ïA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 125°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ïA
VGS = 10 V, ID = 7.8 A
gFS
Forward Transconductance
ï€
Dynamic Characteristics
VDS = 40 V, ID = 7.8 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ï€
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 50 V, ID = 19 A,
RG = 25 ï—
VDS = 80 V, ID = 19 A,
VGS = 10 V
(Note 4)
(Note 4)
Min.
100
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
0.1
--
--
--
--
--
0.078
11
600
165
32
7.5
150
20
65
19
3.9
9.0
Max.
--
--
1
10
100
-100
4.0
0.1
--
780
215
40
25
310
50
140
25
--
--
Unit
V
V/°C
ïA
ïA
nA
nA
V
ï—
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/ïs
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 1.35 mH, IAS = 15.6 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 19 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
--
--
15.6
A
--
--
62.4
A
--
--
1.5
V
--
78
--
ns
-- 200
--
nC
©2007 Fairchild Semiconductor Corporation
2
FQD19N10 Rev. C1
www.fairchildsemi.com
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