FQD19N10 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD19N10 Datasheet PDF : 8 Pages
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1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102
is Limited by R DS(on)
100 ïs 10 ïs
1 ms
101
10 ms
DC
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 7.8 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
16
12
8
4
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0 .5
100
0 .2
0 .1
0 .05
1 0 -1
0 .0 2
0 .0 1
sin g le p u lse
※ N o te s :
1.
Z
θ
J C( t)
=
2 .5
℃ /W
M ax.
2. D u ty F a ctor, D = t1/t2
3.
T JM
-
TC
=
P DM
*
Z
θ
J C( t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
4
FQD19N10 Rev. C1
www.fairchildsemi.com
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