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FDH15N50 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDH15N50
Fairchild
Fairchild Semiconductor Fairchild
FDH15N50 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Package Marking and Ordering Information
Device Marking
FDH15N50
FDP15N50
FDB15N50
Device
FDH15N50
FDP15N50
FDB15N50
Package
TO-247
TO-220
TO-263
Reel Size
Tube
Tube
330mm
Tape Width
-
-
24mm
Quantity
30
50
800
Electrical Characteristics TJ = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Statics
BVDSS
Drain to Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ID = 250µA, VGS = 0V
500
Reference to 25oC,
ID = 1mA
-
VGS = 10V, ID = 7.5A
-
VDS = VGS, ID = 250µA
2.0
VDS = 500V TC = 25oC
-
VGS = 0V
TC = 150oC -
VGS = ±30V
-
Dynamics
gfs
Forward Transconductance
VDD = 10V, ID = 7.5A
10
Qg(TOT) Total Gate Charge at 10V
VGS = 10V,
-
Qgs
Gate to Source Gate Charge
VDS = 400V,
-
Qgd
Gate to Drain “Miller” Charge
ID = 15A
-
td(ON) Turn-On Delay Time
VDD = 250V,
-
tr
Rise Time
ID = 15A,
-
td(OFF) Turn-Off Delay Time
RG = 6.2,
-
tf
Fall Time
RD = 17
-
CISS
COSS
Input Capacitance
Output Capacitance
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
CRSS Reverse Transfer Capacitance
-
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy2
760
IAR
Avalanche Current
-
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
D
-
showing the
integral reverse G
p-n junction diode. S
-
ISD = 15A
-
ISD = 15A, diSD/dt = 100A/µs
-
ISD = 15A, diSD/dt = 100A/µs
-
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 7.0mH, IAS = 15A
Typ Max
-
-
0.58
-
0.33 0.38
3.4
4.0
-
25
-
250
-
±100
-
-
33
41
7.2
10
12
16
9
-
5.4
-
26
-
5
-
1850
-
230
-
16
-
-
-
-
15
-
15
-
60
0.86 1.2
470 730
5
6.6
Units
V
V/°C
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2

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