GFB70N03 View Datasheet(PDF) - General Semiconductor
Part Name
Description
Manufacturer
GFB70N03 Datasheet PDF : 5 Pages
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GFB70N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
40
ID = 250µA
39
38
37
36
35
--50 --25 0
25 50
75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Thermal Impedance
1
D = 0.5
0.2
PDM
0.1
0.1
0.05
Single Pulse
0.01
t1
t2
1. Duty Cycle, D = t1/t2
2. RθJC (t) = RθJC(norm) *RθJC
3. RθJC = 2.0°C/W
4. TJ - TC = PDM * RθJC (t)
0.0001 0.001
0.01
0.1
1
10
Pulse Duration (sec.)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
800
RθJC = 2.0°C/W
TC = 25°C
600
400
200
0
0.0001 0.001
0.01
0.1
1
10
Pulse Duration (sec.)
Fig. 13 – Maximum Safe Operating Area
1000
100
RDS(ON) Limit
100µs
1ms
10ms
10
100ms
VGS = 10V
Single Pulse
DC
RΘJC = 2.0 ¡C/W
TC = 25°C
1
0.1
1
10
100
VDS -- Drain-Source Voltage (V)
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