DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GP2S24CJ000F View Datasheet(PDF) - Sharp Electronics

Part Name
Description
Manufacturer
GP2S24CJ000F Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
1Soldering temperature
1 For 5s or less
Symbol
IF
VR
P
VCEO
VECO
IC
PC
Ptot
Topr
Tstg
Tsol
(Ta=25˚C)
Rating
Unit
50
mA
6
V
75
mW
35
V
6
V
20
mA
75
mW
100
mW
25 to +85 ˚C
40 to +100 ˚C
260
˚C
GP2S24J0000F Series
Soldering area
Electro-optical Characteristics
Parameter
Symbol
Condition
Forward voltage
Input
Reverse current
VF
IF=20mA
IR
VR=6V
Output
Transfer
charac-
teristics
Collector dark current
2 Collector Current
Response time
3 Leak current
Rise time
Fall time
ICEO
IC
tr
tf
ILEAK
VCE=20V
IF=4mA, VCE=2V
VCE=2V, IC=100μA,
RL=1kΩ, d=1mm
IF=4mA, VCE=2V
2 The condition and arrangement of the reective object are shown below.
The rank splitting of collector current (IC) shall be executed according to the table below.
Rank
Collector current, IC [μA]
(IF=4mA, VCE=2V)
A
20 to 42
B
34 to 71
C
58 to 120
3 Without reective object.
Package sleeve color
Yellow
Transparent
Green
MIN.
20
TYP.
1.2
1
45
20
20
(Ta=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
120 μA
100
100
μs
100 nA
Test Conditon and Arrangement for Collector Current
Al evaporation
d=1mm glass plate
Sheet No.: D3-A01801EN
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]