IXBH10N170 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXBH10N170 Datasheet PDF : 5 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
4.0 6.5
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
700
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
40
pF
12
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
30
nC
6
nC
10
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 56 Ω
35
ns
28
ns
500
ns
1000
ns
6
mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 56 Ω
35
ns
28
ns
0.7
mJ
600
ns
1200
ns
8
mJ
(TO-247)
0.89 K/W
0.25
K/W
Reverse Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V, Pulse test,
t < 300 us, duty cycle d < 2%
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 50 A/us
vR = 100 V
3.0 V
10
A
360
ns
Min Recommended Footprint
IXBH 10N170
IXBT 10N170
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
AA12
2.2 2.54
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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