KDR322(2001) View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
KDR322 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : VF=0.54V (Typ.).
ᴌLow Reverse Current : IR=5ỌA (Max.).
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VRM
VR
IFM
IO
PD
Tj
Tstg
RATING
45
40
300
100
100
125
-55ᴕ125
UNIT
V
V
mA
mA
mW
ᴱ
ᴱ
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
E
M
B
M
2
1
3
N
K
N
1. N.C
2. ANODE
3. CATHODE
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
3
2
1
USM
Marking
UL
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF (1)
VF (2)
VF (3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
VR=40V
VR=0, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.28
0.36
0.54
-
18
MAX.
-
-
0.60
5
25
UNIT
V
ỌA
pF
2001. 12. 4
Revision No : 2
1/2
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