KM110B View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
KM110B Datasheet PDF : 6 Pages
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Philips Semiconductors
Magnetic field sensor
Preliminary specification
KM110B/2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Ptot
Tstg
Tbridge
DC supply voltage
total power dissipation
storage temperature
bridge operating temperature
up to Tamb = 130 °C;
see Fig.5
note 1
Note
1. Maximum operating temperature of the thin-film permalloy.
MIN.
−
−
−40
−40
MAX.
12
120
+150
+150
UNIT
V
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
180
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; VCC = 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Hy
magnetic field strength
note 1
S
sensitivity
open circuit; notes 2 and 3
TCVO
Rbridge
TCRbridge
Voffset
TCVoffset
FL
FH
f
temperature coefficient of
output voltage
bridge resistance
temperature coefficient of
bridge resistance
offset voltage
temperature coefficient of
offset voltage
linearity deviation of output
voltage
hysteresis of output voltage
operating frequency
VCC = −5 V;
Tamb = −25 to +125 °C
ICC = 3 mA;
Tamb = −25 to +125 °C
Tbridge = −25 to +125 °C
Tbridge = −25 to +125 °C
Hy = 0 to ±1 kA/m
Hy = 0 to ±1.6 kA/m
Hy = 0 to ±2 kA/m
note 4
MIN.
−2.2
2.9
−
TYP.
−
3.6.
−0.4
MAX.
+2.2
4.4
−
UNIT
kA/m
m-k---A--V----⁄--⁄-m-V--
%/K
−
−0.1
−
%/K
1.6
−
2.6
kΩ
−
0.3
−
%/K
−0.5
−
+0.5
mV/V
−5
±1.5
5
(µV/V)/K
−
−
0.5
%⋅FS
−
−
1.7
%⋅FS
−
−
2.0
%⋅FS
−
−
0.5
%⋅FS
0
−
1
MHz
November 1994
3
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