High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
Q1
VBATT
IN
MAX6399
GATE
OUT
LOAD
VBATT
GND
(a)
Figure 8. Reverse Voltage Protection Using a Diode or p-Channel MOSFET
IN
MAX6399
GATE
OUT
GND
(b)
LOAD
MOSFET Selection
Select external MOSFETs according to the application
current level. The MOSFETs on-resistance (RDS(ON))
should be chosen low enough to have minimum voltage
drop at full load to limit the MOSFET power dissipation.
Chip Information
TRANSISTOR COUNT: 590
PROCESS: BiCMOS
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