MBM29LV008BA-12 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29LV008BA-12

FLASH MEMORY CMOS 8M (1M × 8) BIT

Fujitsu 

MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12

Table 6 MBM29LV008TA/008BA Standard Command Definitions

Command

Sequence

Bus

Write

Cycles

First Bus Second Bus Third Bus

Write Cycle Write Cycle Write Cycle

Fourth Bus

Read/Write

Cycle

Fifth Bus

Write Cycle

Sixth Bus

Write Cycle

Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data

Read/Reset

1 XXXH F0H — — — — — — — — — —

Read/Reset

3 555H AAH 2AAH 55H 555H F0H RA RD — — — —

Autoselect

3 555H AAH 2AAH 55H 555H 90H — — — — — —

Program

4 555H AAH 2AAH 55H 555H A0H PA PD — — — —

Chip Erase

6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Sector Erase

6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H

Sector Erase Suspend Erase can be suspended during sector erase with Addr. (“H” or “L”). Data (B0H)

Sector Erase Resume Erase can be resumed after suspend with Addr. (“H” or “L”). Data (30H)

Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA) and

Sector Address (SA)

2. Bus operations are defined in Table 2.

3. RA = Address of the memory location to be read

PA = Address of the memory location to be programmed

Addresses are latched on the falling edge of the write pulse.

SA = Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, and A13 will

uniquely select any sector.

4. RD = Data read from location RA during read operation.

PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.

5. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

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