MMSF7P03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (1)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.3 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(3)
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc,
RG = 10 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
(See Figure 8)
(VDS = 10 Vdc, ID = 4.9 Adc,
VGS = 6.0 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
VSD
—
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
—
Reverse Recovery Time
trr
—
(IS = 4.9 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
µAdc
—
1.0
—
25
—
100
nAdc
Vdc
—
—
mW
26
35
42
50
12
—
Mhos
1200
1680
pF
580
810
160
220
23.5
47
ns
42.7
85.4
57.4
114.8
53.6
107.2
16
32
15.2
30.6
99.7
199.4
55.2
110.4
37.9
75.8
nC
4.2
—
11.5
—
7.6
—
0.76
1.2
Vdc
0.61
—
47.9
—
ns
27
—
21
—
0.052
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data