MT4C1M16C3TG-6 View Datasheet(PDF) - Micron Technology

Part Name

Description

Manufacturer

MT4C1M16C3TG-6

1 MEG x 16 FPM DRAM

Micron Technology 

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Pin Relative to VSS

3.3V ..................................................... -1V to +4.6V

5V ........................................................... -1V TO +7V

Voltage on NC, Inputs or I/O Pins Relative to VSS

3.3V ..................................................... -1V to +5.5V

5V ........................................................... -1V TO +7V

Operating Temperature

TA (commercial) ...................................... 0°C to +70°C

TA (extended "ET") ............................ -20°C to +80°C

Storage Temperature (plastic) ............ -55°C to +150°C

Power Dissipation ........................................................ 1W

1 MEG x 16

FPM DRAM

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Notes: 1, 5, 6; notes can be found on page 9); VCC (MIN) ≤ VCC ≤ VCC (MAX)

PARAMETER/CONDITION

SUPPLY VOLTAGE

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

INPUT LEAKAGE CURRENT:

Any input at VIN (0V ≤ VIN ≤ VCC + 0.3V);

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

IOUT = -2mA

OUTPUT LOW VOLTAGE:

IOUT = 2mA

OUTPUT LEAKAGE CURRENT:

Any output at VOUT [0V ≤ VOUT ≤ VCC (MAX)];

DQ is disabled and in High-Z state

SYMBOL

VCC

3.3V

MIN MAX

3

3.6

5V

MIN MAX UNITS NOTES

4.5 5.5

V

VIH

2

5.5 2.4 VCC + 1 V

VIL

-1.0 0.8 -0.5 0.8

V

II

-2

2

-2

2

µA

VOH

2.4

–

2.4

–

V

VOL

–

0.4

–

0.4

V

IOZ

-5

5

-5

5

µA

1 Meg x 16 FPM DRAM

D51_5V_B.p65 – Rev. B; Pub 3/01

5

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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